Abstract
We demonstrate high-resolution near-field optical microscopy of self-assembled single semiconducting InAs/GaAs QDs at liquid nitrogen temperature of 70K. We have reduced the number of excited QDs as well as the background photoluminescence (PL) from the barrier layer by simultaneously employing both shadow mask apertures produced by 100 nm dielectric microspheres and a 30 (or 100) nm apertured fiber probe that allow enhanced spatial and optical resolution at 70K
© 2003 Optical Society of America
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