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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper JThC62

Optical Mixing in InP-based High-Electron Mobility Transistors by Use of a Focused Laser Beam

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Abstract

Optical mixing in InP-based ultra-fast high-electron mobility transistors (HEMTs) using a focused laser beam onto the surface was studied in detail. Position-dependent optical responses in the HEMT and optical signal detection at 10GHz were demonstrated.

© 2006 Optical Society of America

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