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Conferences > QELS > 2006 > JTuD > JTuD18
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper JTuD18

Terahertz Emission and Lifetime Measurements of Ion- implanted Semiconductors: Experiment and Simulation

J. Lloyd-Hughes, E. Castro-Camus, M.D. Fraser, H.H. Tan, C. Jagadish, and M.B. Johnston

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Abstract

The spectral width of terahertz emission from ion-implanted terahertz emitters increases with ion damage, owing to ultrafast carrier capture. Carrier dynamics simulations reinforce these findings. Optical-pump, terahertz-probe experiments confirm the subpicosecond lifetimes of these materials.

© 2006 Optical Society of America

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