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Conferences > QELS > 2006 > JWB > JWB1
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper JWB1

Carrier capture in InGaAsSb/InAs/InGaSb type-II QW laser heterostructures

L. Shterengas, A. Ongstad, R. Kaspi, S. Suchalkin, G. Belenky, M. Kisin, and D. Donetsky

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Abstract

Experimental studies of the electron and hole concentration dynamics in the barrier of GaSb-based type-II quantum-well (QW) heterostructures was performed. Difference between electron and hole relaxation rates is explained by corresponding QW carrier confinement energies.

© 2006 Optical Society of America

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