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Conferences > QELS > 2006 > JWB > JWB77
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper JWB77

Experimental and Theoretical Analysis on Ultraviolet 370-nm AlGaInN Light-Emitting Diodes

Yi-An Chang, Sheng-Horng Yen, Tsung-Hsine Ko, Te-Chung Wang, Chun-Yi Lu, Hao-Chung Kuo, Yen-Kuang Kuo, Tien-Chang Lu, and Shing-Chung Wang

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Abstract

A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation results suggest that optimal performance is obtained when the LED has more than 3 wells and the AlGaN has Al composition of 19-21%.

© 2006 Optical Society of America

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