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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper JThA3

GaAs-Based Buried Heterostructure Laser Incorporating an InGaP Opto-Electronic Confinement Layer

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Abstract

We demonstrate a novel process for fabrication of GaAs-based single lateral mode buried heterostructure lasers using a single epitaxial overgrowth in which an n-doped InGaP layer is utilized for both electrical and optical confinement.

© 2008 Optical Society of America

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