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Conferences > QELS > 2008 > JThA > JThA70
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper JThA70

Optical anisotropy in InGaN/GaN quantum-well light–emitting diodes with a general crystal orientation

S.-H. Park, D. Ahn, and J.-E. Oh

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Abstract

We have studied the crystal orientation effect on optical anisotropy in InGaN/GaN quantum-well light-emitting diodes. The absolute value of the anisotropy is found to increase rapidly with increasing crystal angle.

© 2008 Optical Society of America

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