Photoconductivity of Ambipolar Long-Channel Carbon-Nanotube Field-Effect Transistors

Chi-Ti Hsieh; D. S. Citrin; D. S. Citrin; P. P. Ruden

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
OSA Technical Digest (CD) (Optica Publishing Group, 2008),
paper JTuA26

Photoconductivity of Ambipolar Long-Channel Carbon-Nanotube Field-Effect Transistors

Chi-Ti Hsieh, D. S. Citrin, and P. P. Ruden

Quantum Electronics and Laser Science Conference 2008

San Jose, California United States
4–9 May 2008
ISBN: 978-1-55752-859-9

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CLEO/QELS Poster Session I (JTuA)

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C. Hsieh, D. S. Citrin, and P. P. Ruden, "Photoconductivity of Ambipolar Long-Channel Carbon-Nanotube Field-Effect Transistors," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optica Publishing Group, 2008), paper JTuA26.

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Abstract

The photocurrents of carbon-nanotube field-effect transistors are small due to the small exciton ionization rate and large exciton nonradiative-decay rate, and the photocurrent gain is small for the long-channel devices.

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