Composition Dependence of Infrared Optical Phonon Modes in AlGaN Epilayers Grown on Sapphire Substrates

Jun-Rong Chen; Tien-Chang Lu; Hao-Chung Kuo; Shing-Chung Wang

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
OSA Technical Digest (CD) (Optica Publishing Group, 2008),
paper JTuA29

Composition Dependence of Infrared Optical Phonon Modes in AlGaN Epilayers Grown on Sapphire Substrates

Jun-Rong Chen, Tien-Chang Lu, Hao-Chung Kuo, and Shing-Chung Wang

Quantum Electronics and Laser Science Conference 2008

San Jose, California United States
4–9 May 2008
ISBN: 978-1-55752-859-9

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CLEO/QELS Poster Session I (JTuA)

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J. Chen, T. Lu, H. Kuo, and S. Wang, "Composition Dependence of Infrared Optical Phonon Modes in AlGaN Epilayers Grown on Sapphire Substrates," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optica Publishing Group, 2008), paper JTuA29.

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Abstract

We reported the systematical study of optical anisotropy of Al_xGa_1−xN epitaxial films grown on sapphire using FTIR measurements. The experimental data can be theoretically fitted by employing a four-phase layered model. Several specific absorption dips were observed when the aluminum composition is larger than 24%. The dip intensity increases with the aluminum compositions. According to the reciprocal space map measurements, these dips may be induced due to the effects of strain relaxation in AlGaN epitaxial layers.

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