Abstract
We present studies of 2D indirect excitons in an in-plane trap created by a laterally modulated gate voltage. Our data indicates an effective evaporative cooling of excitons in the elevated trap regime. We also observed narrow PL lines which correspond to the emission of localized and delocalized states of the indirect excitons in the trap. The homogeneous line broadening due to interaction increases with density and dominates the linewidth of the indirect exciton emission at high densities.
© 2008 Optical Society of America
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