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Near-UV LEDs on Sapphire Using Single Crystal AlN-Buffer

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Abstract

UV-LEDs were fabricated on GaN formed on sapphire using high-temperature-grown AlN buffer. For flip-chip devices, peak wavelength, output power, operation voltage and external quantum efficiency at 20 mA were 383 nm, 23 mW, 3.5 V and 36%, respectively. The internal quantum efficiency was estimated to be as high as 72%. These values were comparable to those for visible LEDs.

© 2011 Optical Society of America

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