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Conferences > QELS > 2012 > QM1G > QM1G.4

Electrically Injected Polariton Lasing from a GaAs-Based Microcavity under Magnetic Field

P. Bhattacharya, A. Das, M. Jankowski, S. Bhowmick, C.S. Lee, and S. Jahangir

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Abstract

Suppression of relaxation bottleneck and subsequent polariton lasing is observed in a GaAs-based microcavity under the application of a magnetic field. The threshold injection current density is 0.32 A/cm2 at 7 Tesla.

© 2012 Optical Society of America

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