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Electrically Injected Polariton Lasing from a GaAs-Based Microcavity under Magnetic Field

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Suppression of relaxation bottleneck and subsequent polariton lasing is observed in a GaAs-based microcavity under the application of a magnetic field. The threshold injection current density is 0.32 A/cm2 at 7 Tesla.

© 2012 Optical Society of America

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