Abstract

The authors have succeeded in fabricating very narrow InGaAs/InP quantum well wires (QWWs with cross sections down to 50 Åx100 Å) by combining electron beam lithograhpy, reverse-mesa wet etching, and the subsequent overgrowth onto bare QWW structures.¹ Moreover, the authors reported several optical properties of the QWWs thus fabricated which manifested the one dimensional confinement of the electron-hole system.¹,² In order to adequately draw on the potential of QWWs, it is essential, in addition to the fundamental qualities described above, to reduce the QWW size fluctuation.³ This is because great size-fluctuation leads to pronounced fluctuation in quantum levels and the resultant broadening of the otherwise sharp density of state spectrum. Considering this, it is urgent that the relationship between the size fluctuation and the characteristics of QWWs be clarified.

© 1993 Optical Society of America