Abstract
Low dimensional semiconductor structures such as quantum wires have recently received great attentions since new physical phenomena with applications to semiconductor lasers and other functional optical devices are expected[1,2]. To fabricate these quantum microstructures, selective growth on patterned substrates is one of the most attractive techniques[3-5]. In order to obtain real quantum wire devices, the structures with lateral width less than 15nm must be achieved. In this paper, we report a successful fabrication of the GaAs triangular-shaped quantum wires with ~10nm lateral width, showing both photoluminescence(PL) measurement and a high-resolution scanning electron micrograph(SEM) observation. The fabrication technique employed here is based on the MOCVD selective growth technique which we have developed recently[6].
© 1993 Optical Society of America
PDF ArticleMore Like This
A. Ishikawa, Y. Arakawa, S. Tsukamoto, Y. Nagamune, and M. Nishioka
ThD4 International Quantum Electronics Conference (IQEC) 1992
S. Tsukamoto, Y. Nagamune, M. Nishioka, Y. Arakawa, S. Sasaki, and N. Miura
CWH1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992
Y. Arakawa
QFC3 Quantum Electronics and Laser Science Conference (CLEO:FS) 1993