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Conferences > QO > 1993 > QFA > QFA.4

GaInAs/InP Long-Wavelength Quantum-Wires and Boxes: Fabrication Technology and Lasers

Shigehisa Arai

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Abstract

Improvements in the regrowth process of a low-pressure OMVPE and the usage of p-type InP substrate enabled to obtain a room temperature CW operation of GaInAs/InP quantum-wire laser. Approaches to high performance lasers consisting of low-dimensional quantum-well structures will be presented.

© 1993 Optical Society of America

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