Abstract
In this work we investigate the mechanism of carrier escape from GaAs/Al0.33Ga0.67As quantum wells in an electric field using CW photocurrent and photoluminescence (PL) techniques. The photocurrent generated with a fixed intensity light source depends strongly on both the applied field and the temperature (T). At low fields the photocurrent increases with T, as expected for a thermally-activated escape mechanism. At higher fields, however, the photocurrent actually decreases with T up to about 100K, and then starts to increase again. The most likely explanation of this is the reduction of a coherent component of the tunneling current, associated with a reduction in the wave function coherence length with increasing temperature.
© 1993 Optical Society of America
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