Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Optical Nonlinearities Associated with Piezo-Electric Field Screening in [111] Strained-Layer InGaAs/GaAs Quantum Wells

Not Accessible

Your library or personal account may give you access

Abstract

Optical switching and logic devices require a large optical nonlinearity (absorptive or refractive) per absorbed photon, combined with a rapid excitation recovery time. The accumulated absorptive (or index) changes during a laser pulse are proportional to the shorter of either the pulse duration or the excitation lifetime. Optimally the two are matched, in which case the switching energy (power-time product) is determined primarily by the absorption (or refraction) cross-section; that is, the change in absorption coefficient per photogenerated carrier-pair. Any mechanism that is purported to enhance the cross-section is therefore of considerable interest. It has been suggested that the in-well screening of the piezoelectric field present in certain strained-layer quantum well structures could provide such an enhancement1.

© 1993 Optical Society of America

PDF Article
More Like This
Scaling of Stark-Shifted Nonhneanties in Multiple Quantum Well Structures

A. N. Cartwright, X. R. Huang, and Arthur L. Smirl
JWB3 Quantum Optoelectronics (QOE) 1995

Scaling of Stark-Shifted Nonlinearities in Multiple Quantum Well Structures

A. N. Cartwright, X. R. Huang, and Arthur L. Smirl
JWB3 Ultrafast Electronics and Optoelectronics (UEO) 1995

Magnitude and Evolution of Piezo-electric Nonlinearities in (111)-Oriented Strained Multiple Quantum Wells

D. S. McCallum, A. N. Cartwright, Thomas F. Boggess, Arthur L. Smirl, T. S. Moise, L. J. Guido, and R. C. Barker
WD3 Nonlinear Optics (NLO) 1992

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved