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Threshold Reduction of 1.3 μm GaInAsP/InP Surface Emitting Laser by a Maskless Circular Planar Buried Heterostructure Regrowth

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Abstract

By a maskless PBH (planar buried heterostructure) LPE regrowth technique, we improved the hetero-interface of GaInAsP/InP circular BH structure. In this report, we demonstrate a low threshold 1.3 μm BH type surface emitting laser using this technique. We call this type of device circular PBH surface emitting laser (CPBH-SELD).

© 1993 Optical Society of America

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