Abstract

In the recent paper ¹ semiclassical treatment of semiconductor laser (SL) with dispersive loss element (DLE) inside the cavity was presented. In SL with frequency dependent photon life time τ_p (${\tau }_p^{-1}={\tau }_{p0}^{-1}+2C\phi$, φ is the slowly varying phase of an electromagnetic field) phase and amplitude noises were shown to be decreased (1 + Cα)² / (l +α²) and (1 + Cα)² / (1 + C²) (α is the linewidth enhancement factor) times, respectively, comparing to the conventional SL (C=0). At the same time, he low frequency portion of current modulation response is unchanged. Possible values of parameter C ¹ can be ~10 and some dozens in the case of atomic absorption cell and the weak coupling of SL to an external high-finesse Fabry-Perot etalon, respectively.

© 1993 Optical Society of America