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A Record Low Threshold InGaAs/GaAlAs Vertical-Cavity Surface-Emitting Laser

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Abstract

An index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure has been proposed and fabricated. A record threshold current of 70μA was achieved by a 5μmϕ core device. The proposed structure provides both strong electrical and optical confinements.

© 1995 Optical Society of America

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