Abstract

The newly developed micro-photoluminescence measurement at low temperature has revealed one-dimensional diffusion of excitons in GaAs quantum wires with the lateral width of 7 - 30 nm fabricated by the selective growth technique using metal-organic chemical vapor deposition. The observed diffusion length increased with decreasing the wire width from 30 to 15 nm, and decreased from 15 to 7 nm, where the maximum diffusion length was about 4 μm for the 15-nm quantum wire. The change of the diffusion length vs. the wire width is expected to be due to the competition between the one-dimensional character and the interface fluctuation.

© 1995 Optical Society of America