Abstract
InP is the preferred substrate for long wavelength (1.3-1.55 μm) optoelectronic devices because of the relative ease of growing epitaxial layers of InGaAsP which have the necessary bandgaps and lattice constants. GaAs is not used as a substrate for the growth of these devices because of the difficulty of growing an epitaxial layer of InGaAs with a high enough In content and proper thickness due to the large lattice mismatch. In this paper, we will show that growing InGaAs quantum dots on (100) GaAs substrates allows us to obtain room temperature photoluminescence (PL) at wavelengths as long as 1.32 μm with a full width at half maximum (FWHM) of only 32 meV.
© 1995 Optical Society of America
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