Abstract

In recent years there has been considerable interest in the quantum effects of dimensional confinement on the optical properties of semiconductor materials. These confinement effects provide a means of artificially tailoring the optical properties of materials, offering the possibility of producing new optoelectronic devices. For example, modification of the carrier density of states makes it possible to produce semiconductor lasers with lower threshold currents and higher gains[1].

© 1995 Optical Society of America