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Carrier capture in GaAs quantum wire structures grown on V-groove substrates

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Abstract

Carrier capture in quantum wells (QWs) has been intensively studied in the past years, especially concerning the dependence of the capture time on QW and barrier dimensions [1]. On the other hand, little is known about the carrier transfer and capture times into one-dimensional (ID) quantum wires (QWRs). In particular, in structures such as crescent-shaped QWRs grown on V-groove substrates, in which the carriers are transferred via both 3D barrier and 2D QW regions surrounding the wires, the carrier capture into the QWRs can be quite complex.

© 1995 Optical Society of America

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