Abstract

A reduction of dimensionality of the electron motions in quantum nano-structures allows new device concept as well as new physics[1,2]. For this purpose, various efforts have been devoted to the fabrication of the quantum dot structures. For example, the use of Stranski-Krastanow growth mode is promising to realize uniform and small quantum dot structures[3,4]. However, in this technique, it is difficult to control the position. On the other hand, the GaAs quantum dots on AlGaAs plinths which was grown on SiO2 patterned substrate was realized by MOCVD selective growth technique with a lateral width of 25nm[5]. In this method, the position of the quantum dots is controlled. But, non uniformity of size of the quantum dots due to the size fluctuation of the SiO2 pattern is unavoidable.

© 1995 Optical Society of America