Abstract

We are developing a femtosecond Near-field Scanning Optical Microscope (NSOM) with the aim of probing ultrafast optoelectronic processes in semiconductor materials and devices with sub-wavelength spatial resolution. Here we present preliminary results from an Equal Pulse Correlation^) (EPC) measurement in GaAs thin films (1 |im thick) taken using our near-field microscope. These results demonstrate the possibility of making highly localized, femtosecond carrier relaxation and/or carrier diffusion measurements in a semiconductor thin film.

© 1995 Optical Society of America