Abstract

The lattice mismatched, InGaAs/(GaAl)As multiple quantum well (MQW) system is currently of interest for optical modulator applications around 1μm. Most work to date has concentrated on the low barrier, InGaAs/GaAs system¹,². Here we investigate, InGaAs/AlAs using time resolved ultrashort pulse laser techniques in order to assess the suitability of this system for applications as high speed modulators based on the quantum confined Stark effect (QCSE) and saturable absorbers for mode-locked lasers. It is shown that this material system may offer advantages for optical modulator applications because an ultrafast recovery can be combined with low photocurrent to reduce power dissipation in a material which retains strong excitonic absorption features and clear QCSE.

© 1995 Optical Society of America