Abstract
We introduce a new semiconductor structure and demonstrate its use as an intracavity femtosecond mode-locker. The structure consists of an AlAs/AlGaAs quarter-wave dielectric stack grown by molecular beam epitaxy. We insert a single quantum well into a quarter wave layer, as shown in Fig. 1a. The reflectivity spectrum (Fig. 1b) shows a characteristic Bragg reflection with a small dip at the exciton wavelength of 850 nm.
© 1995 Optical Society of America
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