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Field-Dependent Transverse Confinement within Selectively Oxidized Microcavities

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Abstract

Buried oxide apertures within microcavities such as vertical-cavity surface emitting lasers (VCSELs)1,2, are effective to transversely confine both carriers and photons within the cavity.3,4 For small cross section area microcavities, the buried oxide layers will also introduce additional optical loss due to aperture scattering.5,6 To reduce the index confinement and optical scattering, the oxide apertures can be thinned and/or pulled away from the optical cavity to diminish the interaction between the fields and the oxide layers.5,6 We show that the induced transverse index confinement from the oxide apertures is dependent upon the relative overlap of the oxide with the longitudinal standing wave intensity within the cavity, regardless of the position or thickness of the oxide layers. The index confinement induced by the oxide apertures is determined from examination of the "oxide" lasing modes present under the oxide layers.3,7

© 1997 Optical Society of America

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