Abstract

The long wavelength vertical cavity surface emitting laser (VCSEL) is becoming one of key devices for future optical communication and interconnection systems. Room temperature (RT) continuous-wave (CW) operations were demonstrated for long wavelength VCSELs with a reduced threshold current and an increased operating temperature [1, 2]. However, temperature characteristics such as characteristic temperature T₀ and the maximum operating temperature are not sufficient for use in actual systems. These are due to carrier leakage related to the small conduction-band discontinuity of GaInAsP/InP systems, difficulties in fabrication of small current confining structures and high reflective mirrors, a large non-radiative absorption, and so on. Recently, the GaInNAs material was proposed as a new long wavelength system emitting 1.3μm and 1.55μm grown on GaAs substrates [3] and 1.2μm RT-CW operations of edge emitting lasers have been demonstrated [4]. The bandgap bowing between arsenide and nitride system is very large and thus long wavelength emission and large conduction-band offset are expected for this material system.

© 1997 Optical Society of America