Abstract
The quantum confined Stark effect (QCSE) has been observed in quantum well structures of many different material systems, such as GaAs/AlGaAs [1]-[3] and InGaAs/InP [4]. Because of the steep rise at the absorption edge, coupled with the very high excitonic resonance peak, and its shift with the applied electric field, the QCSE has many applications in optoelectronics.
© 1997 Optical Society of America
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