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Self-Assembled In0.5Ga0.5As Quantum Dot Lasers with Doped Active Region

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Abstract

Recently, extensive studies on low-dimensional semiconductor heterostructures, including quantum dots and quantum wires, have been carried out for device applications and fundamental researches.[l-3] In this work, we have investigated the lasing characteristics of self-assembled In0.5Ga0.5As quantum dot lasers with doped or undoped quantum dot active region.

© 1999 Optical Society of America

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