Abstract
An integrated low power optical device with cascadable properties is essential for general purpose optical processing systems. We propose and demonstrate such a device by placing an intrinsic GaAs/AlGaAs multiquantum well structure in the base collector region of an n- p-i-n heterojunction bipolar transistor. A gain of 50 is obtained by the MBE grown devices and efficient switching occurs due to the amplification of the negative resistance region of the exciton based photocurrent.
© 1989 Optical Society of America
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