Abstract
The materials system AlGaAs/GaAs has been used extensively for synthesis of quantum well (QW) optoelectronic devices. The III-V alloy InGaP provides an alternative to AlGaAs for confinement of GaAs QWs. At the composition for lattice matching to GaAs, In0.48Ga0.52P exhibits a room temperature bandgap of 1.89 eV, somewhat larger than that of Al0.3Ga0.7As, and the In0.48Ga0.52P/GaAs valence band offset (ΔEv) is about 0.3 eV, larger than that of the Al0.3Ga0.52As/GaAs heterojunction. Furthermore, InGaP exhibits a lower concentration of deep levels than AlGaAs, and InGaP does not oxidize as readily as AlGaAs. InGaP/GaAs QWs have been previously reported by Razeghi et al., who used metalorganic chemical vapor deposition to grow wells as narrow as 15Å(1) We report here the growth of InGaP/GaAs QWs by gas-source molecular beam epitaxy (GSMBE). Single QWs as narrow as 6Å and multiple QW superlattices with abrupt interfaces are described.
© 1989 Optical Society of America
PDF ArticleMore Like This
D.E. Ackley, C. Colvard, H. Lee, and N. Nouri
TuE5 Quantum Wells for Optics and Opto-Electronics (QWOE) 1989
D. Ankri, W. J. Schaff, J. A. Barnard, S. Ralph, and L. F. Eastman
MJ3 Optical Fiber Communication Conference (OFC) 1983
CONNIE J, CHANG-HASNAIN, Y. H. LO, R. BHAT, N. G. STOFFEL, and D. M. HWANG
FO5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989