Abstract

There is an interest in the technical community to develop efficient 10 µm detectors for the focal plane arrays. GaAs-AlGaAs quantum well detectors are one of these candidates. The detection principle in these systems is based on the concept of intersubband transitions. These far infrared detectors are normally biased. The energy levels in biased quantum wells shift downward and the peak of the electron positional probability shifts toward the deeper side of the quantum well potential. This paper presents an exact method to calculate the energy levels and positional probability in biased quantum wells.

© 1994 Optical Society of America