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Spectral Hole Burning and Fluorescence Line Narrowing of Si Center in CVD Diamond

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Abstract

In this presentation we report on several spectral features associated with Si impurity in diamond related to spectral hole-burning. Diamond, with its hardness and high temperature stability, is a potentially useful material for high temperature hole-burning storage. The first hole-burning in bulk diamonds [1] was observed from color centers in the spectra of N3 at 415 nm, H4 at 496 nm, N-V at 637 nm, and GR1 at 741 nm. Recently, hole-burning was observed for color centers N-V at 637 nm and 574 nm of electron irradiated chemical-vapor deposited (CVD) diamonds [2].

© 1994 Optical Society of America

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