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Negative Refraction in a Semiconductor Metamaterial in the Mid-Infrared

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Abstract

We fabricate semiconductor metamaterials using anisotropic n+-GaInAs/i-AlInAs heterostructures that supports negative index modes in the mid-infrared. We demonstrate a negative index over a wide range of incidence angles and for λ~8.9–15μm wavelengths.

© 2008 Optical Society of America

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