Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Tunnel-Injection Laser Based on Type II Broken-Gap p-GaInAsSb/p-InAs Single Heterojunction

Not Accessible

Your library or personal account may give you access

Abstract

We present a new physical approach to design of III-V middle-infrared diode lasers which can lead to increasing operating temperature of InAs-based lasers. Main pecularity of proposed method is using interface radiative recombination of spatially-separated carriers in type II broken-gap p-p heterojunctions (HJs). Lattice-machted nondoped and doped GaIn0.17As0.22Sb layers with high quality interface were grown on p-InAs (100). It was established that GaIn0.17As0.22Sb/InAs HJ is type II with broken-gap alignment.

© 1995 Optical Society of America

PDF Article
More Like This
Advanced tunnel-injection laser based on the type II broken-gap GaInAsSb/InAs heterojunction for the spectral range 3-3.5 µm

Yu. P. Yakovlev, K. D. Moiseev, M. P. Mikhailova, O. G. Ershov, and G. G. Zegrya
CTuO2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1996

Midwave-infrared semiconductor lasers with InAs/GaInSb broken-gap-superlattice active regions

T. C. Hasenberg, D. H. Chow, R. H. Miles, A. R. Kost, and L. West
JWE2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1995

Midwave-IR semiconductor lasers with InAs/GalnSb Broken-gap superlattice active regions

T. C. Hasenberg, D. H. Chow, R. H. Miles, A. R. Kost, and L. West
JWE2 Quantum Electronics and Laser Science Conference (CLEO:FS) 1995

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved