Modeling Considerations for UV Diode Lasers Based on GaN

P. G. Eliseev; M. Osinski

doi:10.1364/SLADA.1995.PDP.1

Semiconductor Lasers Advanced Devices and Applications
Technical Digest Series (Optica Publishing Group, 1995),
paper PDP.1
•https://doi.org/10.1364/SLADA.1995.PDP.1

Modeling Considerations for UV Diode Lasers Based on GaN

P. G. Eliseev and M. Osinski

Semiconductor Lasers: Advanced Devices and Applications 1995

Keystone, Colorado United States
21–23 August 1995
ISBN:

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P. G. Eliseev and M. Osinski, "Modeling Considerations for UV Diode Lasers Based on GaN," in Semiconductor Lasers Advanced Devices and Applications, Technical Digest Series (Optica Publishing Group, 1995), paper PDP.1.

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Abstract

The material parameters of GaN active medium are reviewed and specified for the numerical modeling of both edge- and surface-emitting laser devices. Calculations are presented for the oscillation strength, recombination coefficients, quantum yield and modal gain in GaN/GaAlN heterostructure. Threshold currents below 10 kA/cm² at room temperature are predicted in optimized diode structures.

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