1.5 μm Vertical-Cavity Surface-Emitting Lasers

M.A. Fisher; Y.-Z. Huang; A.J. Dann; D.J. Elton; M.J. Harlow; S.D. Perrin; J. Reed; I. Reid; H.J. Wickes; M.J. Adams

doi:10.1364/SLADA.1995.TuD.2

Semiconductor Lasers Advanced Devices and Applications
Technical Digest Series (Optica Publishing Group, 1995),
paper TuD.2
•https://doi.org/10.1364/SLADA.1995.TuD.2

1.5 μm Vertical-Cavity Surface-Emitting Lasers

M.A. Fisher, Y.-Z. Huang, A.J. Dann, D.J. Elton, M.J. Harlow, S.D. Perrin, J. Reed, I. Reid, H.J. Wickes, and M.J. Adams

Semiconductor Lasers: Advanced Devices and Applications 1995

Keystone, Colorado United States
21–23 August 1995
ISBN:

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M. A. Fisher, Y. -. Huang, A. J. Dann, D. J. Elton, M. J. Harlow, S. D. Perrin, J. Reed, I. Reid, H. J. Wickes, and M. J. Adams, "1.5 μm Vertical-Cavity Surface-Emitting Lasers," in Semiconductor Lasers Advanced Devices and Applications, Technical Digest Series (Optica Publishing Group, 1995), paper TuD.2.

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Abstract

VCSELs emitting in the 1.3 and 1.55 μm regions could be particularly useful as low cost sources for optical fibre telecommunications applications because mode-matched devices can be coupled to single-mode fibres with high efficiency and good alignment tolerance. The absence of cleaved facets also permits on-wafer characterisation of devices.

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