Abstract

We have recently developed and demonstrated a Schottky-diode-based LCLV. The concept is to use a Schottky metal-semiconductor interface which allows depletion through the silicon to be attained and thus maintain the impedance match between the photoconductor and the liquid crystal. This match is critical in achieving the operation of a photoactivated SLM.⁽¹⁾ Since a high Schottky barrier-forming metal such as aluminum or platinum can be deposited on the n-type silicon substrate at low temperature, the silicon substrate can first be mounted on a flat glass substrate, polished, and then processed. This allows a high degree of output uniformity to be attained. Secondly, by eliminating the SiO₂ insulator present in our MOS LCLV version,⁽²⁾ one can reduce the sheet conductivity at the Si/LC interface and achieve higher resolution and dynamic range.

© 1988 Optical Society of America