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Conferences > SLMA > 1993 > PD > PD.3

Lowered Temperature MBE Regrowth of LED Structures on High Density GaAs Circuits Fabricated through MOSIS

Annette C. Grot, Demetri Psaltis, Krishna V. Shenoy, and Clifton G. Fonstad

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Abstract

We present results on GaAs/AlGaAs LEDs monolithically integrated by Molecular Beam Epitaxy (MBE) regrowth with GaAs MESFET circuits fabricated through the MOSIS service.

© 1993 Optical Society of America

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