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Direct Bonding of InP to Si for Optoelectronic Integration

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Abstract

Integration of III-V optical devices on Si is an essential technology to realize optoelectronic integrated circuits (OEICs). Especially, fabrication of InGaAsP/InP long-wavelength lasers on Si is very attractive for optical interconnections between Si LSI chips because Si is transparent at the lasing wavelength.

© 1997 Optical Society of America

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