Abstract

Multiple-quantum-well (MQW) electro-optical devices have demonstrated high speed operation for optical links, switching, and detection¹. Integration of MQW devices with III-V modulation-doped field effect transistors (MODFETs) provides a mean of realizing monolithically integrated optoelectronic circuits where the performance penalty associated with hybrid packaging between photodetector, modulator and electronic Si circuits is minimized and the overall performance can be maximized. In this paper, we report the results of two integration technologies. One is based on InAlGaAs/InGaAs MQW materials on a GaAs substrate; the other utilizes a substrate removal process. Both technologies permit further integration of III-V opto-electronic (OE) circuits with silicon circuitry using flip-chip bonding techniques. To this end, a III-V 2x2 optoelectronic switch has been implemented using this approach for subsequent flip-chip integration with CMOS circuitry.

© 1997 Optical Society of America