Abstract
III-V multiple quantum well modulators and detectors form a promising device technology for the optoelectronic interconnection of integrated circuits. Integration of large arrays with silicon electronics has been demonstrated by Lucent Technologies using the GaAs-AlGaAs material system [1]. Similar technology is being pursued in our own programme using InGaAs-AIGaAs MQW structures [2].
© 1997 Optical Society of America
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