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Conferences > SOLED > 2010 > SOThB > SOThB3

LED-fabrication independent light extraction enhancement structure on back-side of sapphire substrate with large area auto-cloned photonics crystals

Shiuh Chao, Chen Yang Huang, and Hao Min Ku

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Abstract

Large area 3-D auto-cloned photonics crystal was fabricated on the backside of the InGaN/GaN LED. Averaged 94±13% light extraction enhancement was obtained uniformly across the 2” wafer that contained more than 14,000 LED.

© 2010 Optical Society of America

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