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Studies and Simulation of Solar Cells With Triple-Junction Concentration Based on III-V Semiconductors (GaInP/GaAs/Ge)

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Abstract

Multi-junction photovoltaic devices can achieve a high level of conversion efficiency. The solar cell with triple-junction based on III-V semiconductors (GaInP/GaAs/Ge) can maintain its characteristics at optimal values, depending on temperature and its subcells thicknesses.

© 2017 Optical Society of America

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