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Localized Diffusion of Dopant by Laser Assist

Sangyoon Bae, Sijin Lee, and Jonghoon Yi

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Abstract

Enhancement of solar cell efficiency was tried by doping selectively using laser. Grooved depth of the silicon wafer was measured as a function of incident green laser intensity. Phosphorus was sprayed on grooved area. Sprayed silicon wafer was annealed while varying incident diode laser intensity. The effect of doping was analyzed by using 4-Point-Probe and Secondary Ion Mass Spectrometer. Doped depth and dopant concentration were analyzed as a function of laser power and phosphorous concentration. The measurement of efficiency was tried.

© 2011 Optical Society of America

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