Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > SumSession_OEDM > 2013 > Th > Th8

The Path Forward: Silicon Electro-Optical Interface for Modern Complementary Metal-Oxide-Semiconductor Integrated Circuits (CMOS ICs)

Kaikai Xu, OSA Student member, and Guann-pyng Li

Not Accessible

Your library or personal account may give you access

Abstract

In this paper a review of the design and properties of silicon light emitting devices fabricated in conventional CMOS/BiCMOS IC process technology is given. The performance of both two-and three-terminal Si-LEDs for monolithic integration in optoelectronic systems is described, followed by a discussion of the differences observed between avalanche LED (i.e., two terminal device, diode) and field emission LED (i. e., three-terminal device, gate-controlled diode).

© 2013 Optical Society of America

PDF Article
More Like This
A Light-emitting-device (LED) with Monolithic Integration on Bulk Silicon in a Standard CMOS technology

Kaikai Xu and Guann-pyng Li
NSa4B.4 Nanophotonics, Nanoelectronics and Nanosensor (N3) 2013

Silicon Electro-Optic Modulator based on the Theory of Gate-controlled Diode

Kaikai Xu and Guann-pyng Li
NSa3A.52 Nanophotonics, Nanoelectronics and Nanosensor (N3) 2013

Silicon Light-emitting Device in Standard CMOS technology

Kaikai Xu, Beiju Huang, Kingsley A. Ogudo, Lukas W. Snyman, Hongda Chen, and G. P. Li
OT1C.3 Optoelectronic Devices and Integration (OEDI) 2015

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use