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100 GHz Double Heterostructure GaInAs/InP p-i-n Photodiode

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Abstract

We report double heterostructure GaInAs/InP p-i-n photodiodes with pulsewidths as short as 3.0 ps, bandwidths exceeding 100 GHz, and external quantum efficiency of 50%.

© 1993 Optical Society of America

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