Abstract
We report double heterostructure GaInAs/InP p-i-n photodiodes with pulsewidths as short as 3.0 ps, bandwidths exceeding 100 GHz, and external quantum efficiency of 50%.
© 1993 Optical Society of America
PDF ArticleMore Like This
Y. G. Wey, K. Giboney, D. L. Crawford, J. E. Bowers, M. J. Rodwell, P. Silvestre, M. J. Hafich, and G. Y. Robinson
ThC3 Picosecond Electronics and Optoelectronics (UEO) 1991
Xu Zheng, Zhichen Gu, Tomohiro Amemiya, Nobuhiko Nishiyama, and Shigehisa Arai
Tu2H.5 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2018
M. Wada, K. Sakakibara, Y. Sekiguchi, and H. Iwaoka
CThF6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991